Quantum mechanical effects can be used in practical devices only once a host of challenges at the interface between basic research and the engineering sciences have been solved. New methods and architectures are needed to integrate quantum states into devices that are sufficiently robust and error-tolerant to be applicable also outside the ideal settings of specialized laboratories.
IQST has a long track record of research collaborations between scientists and engineers. Together they have developed, for instance, waveguides, micro-electronics, optics, and detectors that serve to integrate individual quantum systems into novel materials and structures. The fragile quantum states at the heart of the device have to be protected against interference and interfaced with classical electronics and optics components that enable a reliable readout of the typically extremely weak signals.
Building on this unique experience, IQST researchers continue to design and fabricate metal nanostructures at the interface between classical antenna technology and modern quantum optics, integrate quantum-optical devices with waveguide and detector structures, and assemble quantum electronic and optical systems into practical microelectronic circuits.
- Prof. Dr. Jens Anders, Institute of Smart Sensors, University of Stuttgart
- Prof. Dr. Stefanie Barz, Institute for Functional Matters and Quantum Technologies, University of Stuttgart
- Prof. Dr. Manfred Berroth, Institute of Electrical and Optical Communication Engineering, University of Stuttgart
- Prof. Dr. Norbert Frühauf, Institute for Large Area Microelectronics, University of Stuttgart
- Prof. Dr. Harald Giessen, 4th Institute of Physics, University of Stuttgart
- Prof. Dr. Alexander Kubanek, Institute of Quantum Optics, Ulm University
- Prof. Dr. Jochen Mannhart, Solid State Quantum Electronics, Max Planck Institute of Solid State Research in Stuttgart
- Prof. Dr. Peter Michler, Institute of Semi-conductor Optics and Functional Interfaces, University of Stuttgart
- Prof. Dr. Jörg Schulze, Institute for Semiconductor Engineering, University of Stuttgart