IQST Grad School Project

Integration of molecular quantum bits with semiconductor spintronics

Project Description:

This project seeks to integrate novel molecular quantum bits with group IV semiconductor spintronics, thus bridging the gap between (physical) chemistry and electrical engineering. The long term goal is to interface ordered arrays of molecular quantum bits with semiconductor based technology for manipulation and readout purposes. This can not only find applications in quantum computing but also in sensing. To reach this goal, we have three objectives. (i) Improving the spin injection, transport and detection in Ge or Si based semiconductor devices. Maintaining CMOS compatibility will bring the final device closer to application environment. (ii) Enabling coherent manipulation of mobile charge carriers and stationary molecular qubits and understanding the interaction between them. To this end we will employ the technique of electrically detected magnetic resonance as well as conventional spin resonance methods. (iii) Finally, we will bring together the semiconducting spintronic device and the molecular qubits. After deposition of the molecular layers, we will extensively study the device in terms of electrical, spintronic and quantum coherent properties.

Selection of recent publications:

Hanle-effect measurements of spin injections from MN5Ge3C0.8/Al2O3-contacts into degenrately doped Ge channels in Si, I. A. Fischer, L. Chang et al.,  Appl. Phys. Lett 105, 222408 2014

Room temperature quantum coherence in a potential molecular qubit, K. Bader et. al., Nat. Commun. 5, 5304 2014

Tuning of Molecular Qubits: Very Long Coherence and Spin-Lattice-Relaxation Times, K. Bader, M. Winkler, J. van Slageren Chem. Commun. 52, 3623 - 3626 (2016).

Electrical detection of spin transport in Si two-dimensional electron gas systems, L.T. Chang, I.A. Fischer, J. Tang, C.Y. Wang, G. Yu, Y. Fan, K. Murata, T. Nie, M. Oehme, J. Schulze, K.L. Wang Nanotechnology 27 (2016) 365701